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| High Resistivity NTD – Production and Applications |
Abstract
Neutron Transmutation Doping (NTD) of silicon has been in use for 25 years. The process is based on irradiation of Si with neutrons.
The process was originally developed by Topsil, and has been the major building stone for power devices since the seventies. The process has been studied intensively in the past.
Here we will give a resume of the major aspects of the technique, the applications and finally take a look into the future, where we will see applications for even higher voltage and higher power. This evolution is driven by two parallel technological progresses.
On one hand, the resistivity of the silicon crystal prior to irradiation is increasing, and on the other hand, the resistivity tolerances of the material with resistivities below 100 W cm prepared by conventional gas phase doping technique, are decreasing. |
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Poul Erik Schmidt, Ph.D., Product Manager of Topsil Semiconductor Materials A/S
Jan Vedde, Ph.D., Quality Manager of Topsil Semiconductor Materials A/S |
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