High Resistivity Silicon for RF-IC and MEMS applications: 
Topsil introduces HiRes™ silicon, a new cheaper substrate for microwave and millimeter wave applications. HiRes™ silicon wafers replace existing RF wafer substrates without compromising important parameters and make "one chip" solutions possible.

Radio Frequency (RF) capable semiconductor processes face hard design conditions for systems operating at GHz frequencies. HiRes silicon enables full integration of new emerging RF MEMS technologies with RF IC circuits.

HiRes™ silicon is monocrystalline silicon grown by the Float Zone process with a bulk resistivity from 8,000 ohm-cm to 30,000 ohm-cm. HiRes silicon is superior to any other RF substrate, making it the best choice for the new technology platform where integration of RF and MOSFET is needed. HiRes silicon is available with both p- and n-type dopant and has a narrow axial and radial resistivity tolerance.

The Float Zone process guarantees the purest silicon. Float Zone silicon has traditionally been used in discrete devices for high power applications like Thyristors, GTO's, IGBT's and PowerMOSFET's.

HiRes™ silicon is an excellent solution for applications such as monolithic microwave integrated circuits, RF Power IC's and new emerging RF MEMS technologies.

Thanks to Topsil's strong R&D effort in Float Zone technology along with state-of-the-art wafering capability, HiRes™ silicon will enable a major breakthrough in RF design and device developments.

Topsil Semiconductor Materials A/S

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Product specifications: HiRes™ Silicon

HiRes™ application note: Please contact Topsil