Topsil offers float zone silicon wafers for GaN thin film growth based on a proprietary technology platform and according to customer specifications. The wafers meet various parameters and are available as single sided polished wafers.
Topsil silicon wafers for GaN growth are suitable for a wide variety of microelectronic devices, such as LED applications, RF communications and power electronics. The wafers require no wafer conditioning prior to film growth.
The wafers for GaN technology are characterised by:
- Crystal perfectness
- Accurate crystallographic orientation <111>
- Predictable bending behavior (BOW)
- High quality surface for EPI
- Perfect edge conditions
- Accurate chemical control
The wafers are available in a diameter of 100, and 150mm, respectively. 200mm is under development.