Topsil enables customers manufacture durable and energy efficient power components, based on extensive knowledge and state-of-the-art equipment. We offer a comprehensive float zone and czochralski product range ranging from non-polished to epitaxial wafers.
Topsil offers Float Zone and Czochralski silicon for all customer purposes – available in bulk or as wafers with any surface quality.
Contact our sales team with any special request or non standard requirements.
Neutron Transmutation Doped Float Zone silicon wafers for reliable high power devices
Neutron Transmutation Doped (NTD) silicon has the lowest resistivity variation of any crystalline silicon product on the market. This is of paramount importance for high power semiconductor devices working under extreme loads.
Preferred Float Zone silicon wafers for leading edge power devices
Topsil Preferred Float Zone (PFZ) silicon can be used for a wide variety of high and medium power applications in which the starting substrate heavily impacts the finished device properties.
Epitaxial wafers for high performance devices
Topsil supplies Czochralski based epitaxial (EPI) wafers for low power, medium power and special devices. The wafers are characterized by tight thickness and resistivity tolerances.
PV-FZ™ wafers for high efficiency solar cells
Recognized for their superior efficiencies above 20%, Topsil Photo voltaic float zone silicon (PV-FZ™) wafers support the development and making of high efficiency solar cells. They are available as n-type and p-type products.
Uniform High Purity silicon for silicon drift detectors
Topsil has designed a unique uniform float zone based high purity silicon substrate (UHPS) with tight resistivity tolerance performing up to unprecedented level. The substrate targets high resolution x-ray, particle and optical detectors.
High Purity Silicon primarily for detector applications
Characterised by the highest resistivity range in the market, Topsil Hyper Pure silicon (HPS) is the preferred choice for optoelectronic devices such as infrared detectors, terahertz systems, x-ray mirrors, and silicon lenses, as well as power semiconductors.
HiRes™ silicon for GHz/THz communication platforms
HiRes™ silicon is an excellent choice for a microwave substrate targeting high reliability telecommunications systems. In these systems, low loss and high performance is essential to keep signal-to-noise ratios at acceptable levels.
High Transmission Silicon for infrared applications
Topsil high transmission (HiTran™) silicon targets IR applications, such as thermal imaging systems, silicon prisms, gratings, grisms, lenses and blanks, passive filters, transmission windows for debris protection, micromachined IR devices, and silicon micro bolometers.
Silicon wafers for GaN thin film growth
Topsil offers float zone silicon wafers for GaN thin film growth based on a proprietary technology platform. The wafers are suitable for a wide variety of microelectronic devices, such as LED applications, RF communications and power electronics.
Topsil offers a selection of different wafers directly from stock. On the e-wafers website, the current list of available wafers and their properties can be viewed.
If you are interested in our products, our sales team can be easily reached by submitting the formula.
If you wish to know more about the company behind the products.
Topsil GlobalWafers A/S – CVR: 37842222 – Siliciumvej 1, DK-3600 Frederikssund – Phone: +45 47 36 56 00
